Damage accumulation in neon implanted silicon
نویسندگان
چکیده
منابع مشابه
Avoiding preamorphization damage in MeV heavy ion-implanted silicon
Implantation of 1.0 MeV ‘isIn in Si results in secondary-defect formation during subsequent 900 “C annealing if the total number of displaced Si atoms is greater than 1.6~ lOi’/ cm’, achieved with a dose near 1.5 X 10i3/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to rem...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2006
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2220644